HUFA75429D3ST
MOSFET N-CH 60V 20A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUFA75429D3ST is an N-Channel UltraFET™ power MOSFET in a TO-252AA (DPAK) surface mount package. This device offers a 60V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C (Tc). With a maximum on-resistance (Rds On) of 25mOhm at 20A and 10V gate drive, it provides efficient power handling with a dissipation rating of 125W (Tc). Key electrical characteristics include a gate charge (Qg) of 85nC (max) at 20V and an input capacitance (Ciss) of 1090pF (max) at 25V. The operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in power supply units, motor control applications, and automotive systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1090 pF @ 25 V |
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