HUFA75345S3S
MOSFET N-CH 55V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUFA75345S3S is a high-performance N-Channel MOSFET from the UltraFET™ series. This component features a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) capability of 75 A at 25°C. With a low on-resistance (Rds On) of 7 mOhm at 75 A and 10 V gate-source voltage, it offers efficient power switching. The device is designed for surface mounting in a TO-263 (D2PAK) package, providing a robust thermal path for its maximum power dissipation of 325 W (Tc). Key electrical parameters include a gate charge (Qg) of 275 nC (Max) at 20 V and input capacitance (Ciss) of 4000 pF (Max) at 25 V. Operating across a wide temperature range from -55°C to 175°C, the HUFA75345S3S is suitable for demanding applications in power supply units, automotive systems, and industrial motor control.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 325W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 275 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
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