HUFA75345G3
MOSFET N-CH 55V 75A TO247-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUFA75345G3 is an N-Channel UltraFET™ Power MOSFET designed for high-current applications. This component features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 75A at 25°C, with a maximum power dissipation of 325W at the same temperature. The low on-resistance of 7mOhm at 75A and 10V gate-source voltage (Vgs) ensures efficient power transfer. Key electrical characteristics include a gate charge (Qg) of 275 nC at 20V and input capacitance (Ciss) of 4000 pF at 25V. The HUFA75345G3 utilizes through-hole mounting with a TO-247-3 package, making it suitable for demanding power switching and control circuits across various industrial applications. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 325W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 275 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
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