HUFA75343S3ST
MOSFET N-CH 55V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUFA75343S3ST is an N-Channel UltraFET™ MOSFET designed for high-power switching applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 75A at 25°C (Tc), with a maximum power dissipation of 270W (Tc). The on-resistance (Rds On) is specified as a maximum of 9mOhm at 75A and 10V gate drive. Key electrical characteristics include input capacitance (Ciss) of 3000pF (max) at 25V and gate charge (Qg) of 205nC (max) at 20V. The device utilizes Metal Oxide technology and is housed in a TO-263-3, D2PAK surface mount package, supplied in Tape & Reel. Operating temperature range is from -55°C to 175°C (TJ). This MOSFET is suitable for use in sectors such as industrial power supplies and automotive electronics.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 205 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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