HUFA75343S3S
MOSFET N-CH 55V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUFA75343S3S is an N-Channel UltraFET™ Power MOSFET designed for demanding applications. This component features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 75A at 25°C (Tc), with a maximum power dissipation of 270W (Tc). The low on-resistance of 9mOhm at 75A and 10V gate-source drive voltage (Vgs) ensures high efficiency. It offers a gate charge (Qg) of 205 nC (max) at 20V and input capacitance (Ciss) of 3000 pF (max) at 25V. Packaged in a TO-263-3, D2PAK (TO-263AB) surface mount configuration, this MOSFET operates across a wide temperature range of -55°C to 175°C (TJ). Its robust construction and performance characteristics make it suitable for use in automotive, industrial power, and power supply applications.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 205 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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