HUFA75339S3S
MOSFET N-CH 55V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUFA75339S3S is an N-Channel UltraFET™ Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 75A (Tc) at 25°C. With a maximum power dissipation of 200W (Tc) and a low on-resistance of 12mOhm @ 75A, 10V, it offers efficient power handling. The HUFA75339S3S utilizes TO-263 (D2PAK) surface mount packaging, making it suitable for high-density board layouts. Key parameters include a Gate Charge (Qg) of 130 nC @ 20V and Input Capacitance (Ciss) of 2000 pF @ 25V. Operating temperature range is -55°C to 175°C (TJ). This component is commonly employed in power supply units, motor control, and automotive systems.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
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