HUFA75337S3S
MOSFET N-CH 55V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi HUFA75337S3S is a 55V N-Channel UltraFET™ MOSFET. This device features a low Rds(on) of 14mOhm at 10V Vgs and 75A Id, enabling efficient power handling with a maximum continuous drain current of 75A (Tc). The power dissipation capability is rated at 175W (Tc). Designed for surface mounting, it utilizes the TO-263 (D2PAK) package. Key electrical parameters include a drain-to-source voltage (Vdss) of 55V, a gate charge (Qg) of 109 nC (max) at 20V Vgs, and an input capacitance (Ciss) of 1775 pF (max) at 25V Vds. The threshold voltage (Vgs(th)) is 4V at 250µA. Operating temperature range is from -55°C to 175°C (TJ). This component is suitable for applications in power supply, automotive, and industrial sectors.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 109 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1775 pF @ 25 V |
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