HUFA75337P3
MOSFET N-CH 55V 75A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi UltraFET™ HUFA75337P3 is a high-performance N-Channel Power MOSFET. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) rating of 75A at 25°C. With a low on-resistance of 14mOhm at 75A and 10V Vgs, it minimizes conduction losses. Key parameters include a Gate Charge (Qg) of 109 nC (max) at 20V and Input Capacitance (Ciss) of 1775 pF (max) at 25V. The HUFA75337P3 is housed in a TO-220-3 package, facilitating through-hole mounting. It offers a maximum power dissipation of 175W (Tc) and operates across an extended temperature range of -55°C to 175°C. This component is well-suited for applications in power conversion, industrial motor control, and automotive systems.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 109 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1775 pF @ 25 V |
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