HUFA75332S3ST
MOSFET N-CH 55V 60A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi HUFA75332S3ST is an UltraFET™ N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 60A (Tc) at 25°C. The device boasts a low On-Resistance (Rds On) of 19mOhm at 60A, 10V, enabled by its Metal Oxide technology. With a maximum power dissipation of 145W (Tc), it is suitable for demanding thermal environments. Key electrical parameters include a Gate Charge (Qg) of 85 nC (Max) at 20V and an Input Capacitance (Ciss) of 1300 pF (Max) at 25V. The HUFA75332S3ST is packaged in a TO-263 (D2PAK) surface mount configuration and operates within an extended temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in power supply, automotive, and industrial control systems.
Additional Information
Series: UltraFET™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 145W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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