HUFA75329S3ST
MOSFET N-CH 55V 49A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi HUFA75329S3ST is an N-Channel UltraFET™ MOSFET designed for high-performance power switching applications. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 49A at 25°C (Tc), with a maximum power dissipation of 128W (Tc). The Rds(On) is specified at 24mOhm at 49A and 10V gate drive. Key parameters include a gate charge (Qg) of 75 nC at 20V and input capacitance (Ciss) of 1060 pF at 25V. The HUFA75329S3ST is housed in a TO-263 (D2PAK) surface mount package and operates across a temperature range of -55°C to 175°C. Industries utilizing this component include automotive, industrial, and consumer electronics for power management and control circuits.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 49A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 128W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 25 V |