HUFA75329S3S
MOSFET N-CH 55V 49A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The **onsemi** UltraFET™ **N-Channel MOSFET**, part number **HUFA75329S3S**, is a robust power semiconductor designed for demanding applications. This TO-263 (D2PAK) surface-mount device features a Drain-to-Source Voltage (Vdss) of 55V and a continuous drain current (Id) capability of 49A at 25°C with a maximum power dissipation of 128W. The low on-resistance specification of 24mOhm at 49A and 10V gate drive voltage, coupled with a gate charge (Qg) of 75 nC at 20V, ensures efficient switching performance. Input capacitance (Ciss) is rated at 1060 pF at 25V. Operating across a wide temperature range from -55°C to 175°C, this MOSFET is suitable for use in power supply, automotive, and industrial motor control systems.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 49A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 128W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 25 V |