HUFA75329P3
MOSFET N-CH 55V 49A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUFA75329P3 is an N-Channel UltraFET™ MOSFET designed for high-performance switching applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) rating of 49A at 25°C (Tc). With a low on-resistance (Rds On) of 24mOhm at 49A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 128W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Key parameters include a Gate Charge (Qg) of 75 nC at 20V and input capacitance (Ciss) of 1060 pF at 25V. The HUFA75329P3 is housed in a TO-220-3 through-hole package, making it suitable for demanding power management solutions in industries such as industrial automation, power supplies, and automotive systems.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 49A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 128W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 25 V |
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