HUFA75329D3ST
MOSFET N-CH 55V 20A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UltraFET™ HUFA75329D3ST is an N-Channel Power MOSFET designed for demanding applications. This component features a 55V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 20A at 25°C (Tc). With a low on-resistance (Rds On) of 26mOhm at 20A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 128W (Tc) and operates over a wide temperature range of -55°C to 175°C. Key parameters include a gate charge (Qg) of 65nC at 20V and input capacitance (Ciss) of 1060pF at 25V. The TO-252AA package is suitable for surface mounting. This MOSFET is utilized in automotive, industrial power control, and consumer electronics sectors.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 128W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 25 V |
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