HUFA75321P3
MOSFET N-CH 55V 35A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi UltraFET™ HUFA75321P3 is an N-Channel power MOSFET designed for high-efficiency switching applications. This device features a 55V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 35A at 25°C (Tc). With a low on-resistance of 34mOhm at 35A and 10V gate drive, it minimizes conduction losses. The device offers a maximum power dissipation of 93W (Tc) and a wide operating temperature range of -55°C to 175°C (TJ). Key electrical parameters include a gate charge (Qg) of 44 nC (Max) at 20V and input capacitance (Ciss) of 680 pF (Max) at 25V. The HUFA75321P3 is housed in a standard TO-220-3 through-hole package and is suitable for use in power supply, motor control, and automotive applications.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 93W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 25 V |
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