HUFA75309T3ST
MOSFET N-CH 55V 3A SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUFA75309T3ST is an N-Channel UltraFET™ MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 3A at 25°C. Its low on-resistance, specified as 70mOhm maximum at 3A and 10V gate drive, minimizes conduction losses. The device offers a gate charge (Qg) of 23 nC maximum at 20V and an input capacitance (Ciss) of 352 pF maximum at 25V. Packaged in a SOT-223-4 (TO-261-4, TO-261AA) via tape and reel, it is suitable for surface mounting. The maximum power dissipation is 1.1W. This MOSFET is utilized in various industries including industrial automation and consumer electronics. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 352 pF @ 25 V |
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