HUFA75309P3
MOSFET N-CH 55V 19A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUFA75309P3 is an N-Channel UltraFET™ MOSFET designed for demanding applications. This component features a 55V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 19A at 25°C. With a maximum on-resistance (Rds On) of 70mOhm at 19A and 10V gate-source voltage, it offers efficient power switching. The device supports a gate drive up to 10V and has a maximum gate-source voltage of ±20V. Key parameters include a gate charge (Qg) of 24 nC and input capacitance (Ciss) of 350 pF. It is packaged in a TO-220-3 through-hole configuration, allowing for a maximum power dissipation of 55W at 25°C case temperature. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in power supply, motor control, and automotive industries.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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