HUFA75309D3
MOSFET N-CH 55V 19A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUFA75309D3 is an N-Channel UltraFET™ Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 19A at 25°C (Tc), with a maximum power dissipation of 55W (Tc). Its low on-resistance (Rds On) of 70mOhm at 19A and 10V gate drive makes it suitable for efficient power switching. Key parameters include an input capacitance (Ciss) of 350pF (Max) at 25V and a gate charge (Qg) of 24nC (Max) at 20V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is housed in an IPAK package (TO-251-3 Short Leads) for through-hole mounting. This device finds application in power supply units, industrial motor control, and automotive electronics.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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