HUFA75307P3
MOSFET N-CH 55V 15A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UltraFET™ HUFA75307P3 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 15A at 25°C, with a maximum power dissipation of 45W (Tc). The Rds On is specified at a maximum of 90mOhm at 15A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 20 nC (max) at 20V and an Input Capacitance (Ciss) of 250 pF (max) at 25V. The HUFA75307P3 utilizes MOSFET (Metal Oxide) technology and is housed in a standard TO-220-3 through-hole package, operating within a temperature range of -55°C to 175°C (TJ). This device is suitable for power management solutions in industrial and automotive sectors.
Additional Information
Series: UltraFET™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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