HUFA75307D3ST
MOSFET N-CH 55V 15A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUFA75307D3ST is an UltraFET™ N-Channel Power MOSFET designed for demanding applications. This component features a 55V drain-source breakdown voltage (Vdss) and a continuous drain current rating of 15A (Tc) at 25°C. With a maximum on-resistance (Rds On) of 90mOhm at 15A and 10V gate-source voltage (Vgs), it provides efficient power handling. The device offers a maximum power dissipation of 45W (Tc) and a wide operating temperature range of -55°C to 175°C (TJ). Its typical applications include power management, motor control, and automotive systems. The HUFA75307D3ST is supplied in a TO-252AA surface mount package, presented on tape and reel. Key electrical parameters include a gate charge (Qg) of 20 nC (max) and input capacitance (Ciss) of 250 pF (max).
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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