HUFA75307D3S
MOSFET N-CH 55V 15A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi UltraFET™ HUFA75307D3S is an N-Channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 15A at 25°C. With a maximum power dissipation of 45W (Tc) and a low on-resistance (Rds On) of 90mOhm at 15A and 10V, it offers efficient switching performance. The device utilizes surface mount technology within a TO-252AA package, facilitating streamlined PCB assembly. Key electrical characteristics include a gate charge (Qg) of 20 nC (Max) at 20V and an input capacitance (Ciss) of 250 pF (Max) at 25V. This MOSFET operates across a temperature range of -55°C to 175°C (TJ). The HUFA75307D3S is employed in various industrial sectors, including automotive and power supply applications.
Additional Information
Series: UltraFET™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
Request a Quote
Clients Also Buy
FDD16AN08A0
MOSFET N-CH 75V 9A/50A DPAK
FDS2734
MOSFET N-CH 250V 3A 8SOIC
FDD3672
MOSFET N-CH 100V 6.5/44A TO252AA
