HUF76645S3S
MOSFET N-CH 100V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi UltraFET™ HUF76645S3S is an N-Channel Power MOSFET in a TO-263 (D2PAK) surface mount package. This component features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 75 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 14 mOhm maximum at 75 A and 10 V gate drive. With a maximum power dissipation of 310 W (Tc), it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 153 nC at 10 V and an input capacitance (Ciss) of 4400 pF at 25 V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly employed in power supply units, motor control, and automotive applications.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 153 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
Request a Quote
Clients Also Buy
FDD16AN08A0
MOSFET N-CH 75V 9A/50A DPAK
FDS2734
MOSFET N-CH 250V 3A 8SOIC
FDD3672
MOSFET N-CH 100V 6.5/44A TO252AA
