HUF76639P3
MOSFET N-CH 100V 51A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UltraFET™ HUF76639P3 is an N-Channel Power MOSFET designed for high-current, high-voltage applications. Featuring a Drain-to-Source Voltage (Vdss) of 100 V and a continuous Drain current (Id) of 51A at 25°C (Tc), this device offers a low on-resistance (Rds On) of 26mOhm at 51A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 86 nC (Max) at 10 V and Input Capacitance (Ciss) of 2400 pF (Max) at 25 V. The MOSFET utilizes Metal Oxide technology and has a Vgs(th) of 3V (Max) at 250µA. Packaged in a TO-220-3 through-hole configuration, the HUF76639P3 is suitable for demanding applications in power supplies, motor control, and automotive systems.
Additional Information
Series: UltraFET™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 51A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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