HUF76633S3ST-F085
MOSFET N-CH 100V 39A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUF76633S3ST-F085 is an UltraFET™ N-Channel Power MOSFET designed for demanding applications. This component features a maximum drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 39A at 25°C (Tc). With a low on-resistance (Rds On) of 35mOhm at 39A and 10V Vgs, it offers efficient power handling up to 183W (Tj). The device is housed in a surface-mount TO-263-3, D2PAK package, suitable for automated assembly. Key electrical characteristics include a gate charge (Qg) of 63 nC at 10V and input capacitance (Ciss) of 1810 pF at 25V. Qualified to AEC-Q101 and featuring automotive grade, this MOSFET is utilized in automotive systems, power supply units, and motor control circuits. It operates across a temperature range of -55°C to 175°C (Tj) and supports gate-source voltages up to ±16V.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 39A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 183W (Tj) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1810 pF @ 25 V |
| Qualification | AEC-Q101 |
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