HUF76633P3-F085
MOSFET N-CH 100V 39A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi HUF76633P3-F085 is an N-Channel UltraFET™ MOSFET designed for automotive applications, meeting AEC-Q101 qualification. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 39A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 35mOhm maximum at 39A and 10V Vgs. Maximum power dissipation (Pd) is 145W (Tc) with a junction temperature range of -55°C to 175°C. Key parameters include a gate charge (Qg) of 67 nC at 10V and input capacitance (Ciss) of 1820 pF at 25V. It is housed in a TO-220-3 package, suitable for through-hole mounting, and is supplied in bulk packaging. Typical applications include automotive power management and motor control systems.
Additional Information
Series: Automotive, AEC-Q101, UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 39A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 145W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 25 V |
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