HUF76633P3
MOSFET N-CH 100V 39A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi UltraFET™ N-Channel MOSFET, part number HUF76633P3, features a 100V drain-source voltage and a continuous drain current of 39A at 25°C. This device offers a maximum on-resistance of 35mOhm at 39A and 10Vgs, with a gate charge of 67nC at 10Vgs. The input capacitance (Ciss) is specified at a maximum of 1820pF at 25Vds. Designed for through-hole mounting in a TO-220-3 package, this component dissipates up to 145W (Tc) and operates within a temperature range of -55°C to 175°C. Applications include power supply circuits and motor control systems.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 39A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 145W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 25 V |
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