HUF76629D3ST-F085
MOSFET N-CH 100V 20A TO252Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUF76629D3ST-F085 is an N-Channel UltraFET™ Power MOSFET designed for demanding applications. This surface-mount device features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 20 A (Tc) at 25°C. With a maximum power dissipation of 150 W (Tc), it is suitable for high-power switching. The MOSFET exhibits a maximum Rds On of 52 mOhm at 20 A and 10 V, with a typical gate charge of 43 nC at 10 V. Its TO-252AA package allows for efficient thermal management in compact designs. Qualified to AEC-Q101 standards, this component is ideal for automotive and industrial power control systems. Operating temperature range is -55°C to 175°C.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1280 pF @ 25 V |
| Qualification | AEC-Q101 |
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