HUF76609D3ST
MOSFET N-CH 100V 10A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi UltraFET™ HUF76609D3ST is an N-Channel power MOSFET with a drain-to-source voltage (Vdss) of 100 V. This device features a continuous drain current (Id) of 10 A (Tc) and a maximum power dissipation of 49 W (Tc). The on-resistance (Rds On) is specified as 160 mOhm at 10 A and 10 V. The gate threshold voltage (Vgs(th)) is a maximum of 3 V at 250 µA. Input capacitance (Ciss) is 425 pF maximum at 25 V, and gate charge (Qg) is 16 nC maximum at 10 V. The HUF76609D3ST utilizes surface mount technology in a TO-252AA package. It is suitable for applications in power supply units, motor control, and general-purpose power switching. The operating temperature range is -55°C to 175°C (TJ). This component is supplied in Tape & Reel packaging.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 49W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 425 pF @ 25 V |
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