HUF76609D3S
MOSFET N-CH 100V 10A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUF76609D3S is an N-Channel UltraFET™ MOSFET designed for demanding applications. Featuring a Drain-to-Source Voltage (Vdss) of 100V, this device offers a continuous drain current (Id) of 10A at 25°C with a maximum power dissipation of 49W. The surface-mount TO-252AA package ensures efficient thermal management. Key parameters include a low Rds On of 160mOhm at 10A and 10V, an input capacitance (Ciss) of 425pF at 25V, and a gate charge (Qg) of 16 nC at 10V. Operating across a temperature range of -55°C to 175°C, the HUF76609D3S is suitable for use in power supply, motor control, and automotive electronics.
Additional Information
Series: UltraFET™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 49W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 425 pF @ 25 V |
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