HUF76609D3
MOSFET N-CH 100V 10A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi's HUF76609D3 is an UltraFET™ N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 10A at 25°C (Tc), with a maximum power dissipation of 49W (Tc). The Rds On is specified at a maximum of 160mOhm at 10A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 16 nC (Max) at 10V Vgs and an Input Capacitance (Ciss) of 425 pF (Max) at 25V Vds. The MOSFET supports a gate drive range from 4.5V to 10V, with a maximum Vgs of ±16V and a threshold voltage (Vgs(th)) of 3V (Max) at 250µA. Packaged in an IPAK (TO-251-3 Short Leads, TO-251AA) with through-hole mounting, it operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for use in power supply, motor control, and industrial applications.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 49W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 425 pF @ 25 V |
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