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HUF76445P3

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HUF76445P3

MOSFET N-CH 60V 75A TO220-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi HUF76445P3 is an N-Channel UltraFET™ Power MOSFET designed for high-performance applications. This component offers a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 75A at 25°C (Tc), with a maximum power dissipation of 310W (Tc). Featuring a low on-resistance (Rds On) of 6.5mOhm at 75A and 10V, it utilizes Metal Oxide technology for efficient switching. The gate charge (Qg) is specified at 150 nC maximum at 10V, and input capacitance (Ciss) is 4965 pF maximum at 25V. The HUF76445P3 is housed in a TO-220-3 package for through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). This device finds application in power supply units, motor control, and industrial automation systems.

Additional Information

Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs6.5mOhm @ 75A, 10V
FET Feature-
Power Dissipation (Max)310W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4965 pF @ 25 V

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