HUF76432P3
MOSFET N-CH 60V 59A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi UltraFET™ HUF76432P3 is an N-Channel Power MOSFET designed for demanding applications. This TO-220-3 packaged device features a 60V drain-source voltage and a continuous drain current capability of 59A at 25°C, with a maximum power dissipation of 130W. The low on-resistance, specified at 17mOhm maximum at 59A and 10V Vgs, ensures efficient power transfer. Key electrical parameters include a gate charge of 53nC at 10V and input capacitance of 1765pF at 25V. The device operates across a wide temperature range of -55°C to 175°C. This component is suitable for use in power supply units, motor control, and automotive applications.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 59A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1765 pF @ 25 V |
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