HUF76429D3S
MOSFET N-CH 60V 20A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUF76429D3S is an N-Channel UltraFET™ MOSFET designed for demanding applications requiring robust power switching. This component features a 60 V drain-source voltage (Vdss) and a continuous drain current (Id) of 20 A at 25°C (Tc), with a maximum power dissipation of 110 W (Tc). The TO-252AA package facilitates surface mounting, and the device exhibits a low on-resistance of 23 mOhm at 20 A and 10 V Vgs. Key electrical characteristics include a gate charge (Qg) of 46 nC at 10 V and input capacitance (Ciss) of 1480 pF at 25 V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for use in automotive, industrial, and power supply applications.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1480 pF @ 25 V |
Request a Quote
Clients Also Buy
FDD16AN08A0
MOSFET N-CH 75V 9A/50A DPAK
FDS2734
MOSFET N-CH 250V 3A 8SOIC
FDD3672
MOSFET N-CH 100V 6.5/44A TO252AA
