HUF76423D3S
MOSFET N-CH 60V 20A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi HUF76423D3S UltraFET™ N-Channel Power MOSFET. This component features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C. The Rds On is specified at a maximum of 32mOhm at 20A and 10V gate-source voltage. With a maximum power dissipation of 85W at 25°C (Tc), this device is suitable for demanding applications. Key electrical parameters include a gate charge (Qg) of 34 nC (max) at 10V and input capacitance (Ciss) of 1060 pF (max) at 25V. The HUF76423D3S utilizes MOSFET technology and is supplied in a TO-252AA surface mount package. Typical operating temperature range is -55°C to 175°C (TJ). This component finds application in automotive and industrial power management systems.
Additional Information
Series: UltraFET™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 25 V |
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