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HUF76419S3ST-F085

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HUF76419S3ST-F085

MOSFET N-CH 60V 29A D2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi HUF76419S3ST-F085 is an N-Channel Power MOSFET from the PowerTrench® series. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 29A at 25°C (Tc). With a maximum power dissipation of 100W (Tc), it is suitable for demanding applications. The device offers a low on-resistance of 35mOhm at 29A and 10V Vgs. It is constructed using MOSFET technology and comes in a TO-263-3, D2PAK surface mount package. Key electrical characteristics include a gate charge of 28.5 nC at 10V Vgs and an input capacitance of 870 pF at 25V Vds. The operating temperature range is -55°C to 175°C (TJ). This component is qualified to AEC-Q101 standards, indicating its suitability for automotive applications.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Rds On (Max) @ Id, Vgs35mOhm @ 29A, 10V
FET Feature-
Power Dissipation (Max)100W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds870 pF @ 25 V
QualificationAEC-Q101

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