HUF76419S3S
MOSFET N-CH 60V 29A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UltraFET™ HUF76419S3S is an N-Channel Power MOSFET designed for high-performance applications. This TO-263 (D2PAK) surface-mount device features a 60 V drain-source voltage (Vdss) and a continuous drain current rating of 29 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 35 mOhm at 29 A and 10 Vgs, it offers efficient power handling with a maximum power dissipation of 75 W (Tc). The device exhibits a typical gate charge of 28 nC and an input capacitance (Ciss) of 900 pF, supporting fast switching characteristics. Operating across a wide temperature range of -55°C to 175°C, the HUF76419S3S is suitable for use in power supply units, motor control, and automotive applications.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
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