HUF76419P3
MOSFET N-CH 60V 29A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUF76419P3 is an UltraFET™ N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 29A at 25°C, with a maximum power dissipation of 75W. The TO-220-3 package provides a through-hole mounting solution for robust integration. Key electrical characteristics include a low on-resistance (Rds On) of 35mOhm at 29A and 10V, and a gate charge (Qg) of 28 nC at 10V. The input capacitance (Ciss) is rated at 900 pF at 25V. This device operates across a wide temperature range of -55°C to 175°C. Applications for this MOSFET include power supply circuits, motor control, and general-purpose power switching in industrial and automotive sectors.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |