HUF76419D3
MOSFET N-CH 60V 20A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi UltraFET™ HUF76419D3 is a high-performance N-Channel Power MOSFET. This through-hole component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 20A at 25°C (Tc). With a maximum on-resistance (Rds On) of 37mOhm at 20A and 10V, it offers efficient power handling capabilities, dissipating up to 75W (Tc). The device utilizes Metal Oxide technology and is packaged in an IPAK (TO-251-3 Short Leads) format. Key electrical parameters include a gate charge (Qg) of 27.5 nC at 10V and input capacitance (Ciss) of 900 pF at 25V. Operating temperature ranges from -55°C to 175°C (TJ) with a maximum gate-source voltage (Vgs) of ±16V. This MOSFET is suitable for applications in power supply, automotive, and industrial sectors requiring robust switching performance.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 27.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
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