HUF76407P3
MOSFET N-CH 60V 13A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi UltraFET™ N-Channel Power MOSFET, part number HUF76407P3, features a 60V drain-to-source voltage and 13A continuous drain current at 25°C. This TO-220-3 packaged device offers a maximum on-resistance of 92mOhm at 13A and 10V Vgs. Key electrical parameters include a gate charge of 11.3 nC at 10V and input capacitance of 350 pF at 25V. The device supports a gate-source voltage range of ±16V and a threshold voltage of 3V at 250µA. With a maximum power dissipation of 38W (Tc), its operating temperature range spans from -55°C to 175°C. The HUF76407P3 is suitable for a variety of applications including power supply units, motor control, and general-purpose switching.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 92mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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