HUF76407D3S
MOSFET N-CH 60V 12A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUF76407D3S is an N-Channel UltraFET™ MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 12A (Tc). With a low on-resistance of 92mOhm at 13A and 10V Vgs, it offers efficient power handling. The device boasts a maximum power dissipation of 38W (Tc) and operates across a wide temperature range of -55°C to 175°C. Key electrical parameters include a gate charge (Qg) of 11.3 nC at 10V and input capacitance (Ciss) of 350 pF at 25V. The HUF76407D3S is supplied in a TO-252AA surface mount package, making it suitable for high-density board designs. Its performance characteristics are leveraged across various industries including automotive, industrial, and consumer electronics.
Additional Information
Series: UltraFET™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 92mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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