HUF76013P3
MOSFET N-CH 20V 20A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUF76733P3 is an UltraFET™ N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 20A at 25°C. With a maximum on-resistance (Rds On) of 22mOhm at 20A and 10V, it offers efficient power handling. The device supports gate drive voltages from 5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. Key electrical parameters include a gate charge (Qg) of 17 nC at 10V and input capacitance (Ciss) of 624 pF at 20V. The HUF76733P3 is packaged in a TO-220-3 through-hole configuration, allowing for robust mounting. Its power dissipation is rated at 50W (Tc). This MOSFET is suitable for use in power supply designs, motor control, and other high-current switching applications across various industrial sectors.
Additional Information
Series: UltraFET™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 624 pF @ 20 V |
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