HUF76009D3ST
MOSFET N-CH 20V 20A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi UltraFET™ HUF76009D3ST is an N-Channel Power MOSFET designed for efficient power switching. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C (Tc), with a maximum power dissipation of 41W (Tc). The on-resistance (Rds On) is specified at a maximum of 27mOhm at 20A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 13 nC (Max) at 10V and input capacitance (Ciss) of 470 pF (Max) at 20V. The device supports gate drive voltages from 5V to 10V, with a maximum Vgs of ±20V. It operates across an extended temperature range of -55°C to 150°C (TJ). The HUF76009D3ST is housed in a TO-252AA (DPAK) surface-mount package and is supplied on tape and reel. This MOSFET is utilized in various demanding applications including automotive, industrial power control, and consumer electronics.
Additional Information
Series: UltraFET™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 20 V |
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