HUF75645S3ST
MOSFET N-CH 100V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UltraFET™ HUF75645S3ST is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 75A at 25°C (Tc), with a maximum power dissipation of 310W (Tc). The Rds On is specified at a maximum of 14mOhm at 75A and 10V gate drive. Key characteristics include a Gate Charge (Qg) of 238 nC (max) at 20V and Input Capacitance (Ciss) of 3790 pF (max) at 25V. Packaged in a TO-263-3, D2PAK (Surface Mount) and supplied on Tape & Reel (TR), this MOSFET is suitable for use in power conversion, motor control, and industrial power supply systems. It operates across a wide temperature range of -55°C to 175°C (TJ).
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 238 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3790 pF @ 25 V |
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