HUF75639S3
MOSFET N-CH 100V 56A I2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UltraFET™ HUF75639S3 is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) rating of 56 A at 25°C (Tc). With a maximum power dissipation of 200 W (Tc), it excels in thermal performance. The low on-resistance (Rds On) of 25 mOhm at 56 A and 10 V gate drive, coupled with a gate charge (Qg) of 130 nC at 20 V, ensures efficient switching. Input capacitance (Ciss) is rated at a maximum of 2000 pF at 25 V. The device utilizes TO-262 (I2PAK) packaging with through-hole mounting. Key specifications include a gate-source voltage (Vgs) range of ±20 V and a threshold voltage (Vgs(th)) of 4 V at 250 µA. This MOSFET is suitable for use in industrial automation, power supply, and automotive sectors.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 56A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
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