HUF75639P3-F102
MOSFET N-CH 100V 56A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi HUF75639P3-F102 is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 56A at 25°C, with a maximum power dissipation of 200W. The device offers a low on-resistance of 25mOhm at 56A and 10V Vgs. Key parameters include a typical Gate Charge (Qg) of 130nC at 20V and Input Capacitance (Ciss) of 2000pF at 25V. The HUF75639P3-F102 utilizes a TO-220-3 through-hole package and operates within a temperature range of -55°C to 175°C. This MOSFET is commonly employed in power supply units, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 56A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
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