HUF75631S3ST
MOSFET N-CH 100V 33A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUF75631S3ST is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 33A at 25°C. With a low on-resistance (Rds(on)) of 40mOhm at 33A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 120W at a case temperature of 25°C. Key parameters include a gate charge (Qg) of 79 nC at 20V and input capacitance (Ciss) of 1220 pF at 25V. The HUF75631S3ST is housed in a TO-263-3, D2PAK surface-mount package and operates across a temperature range of -55°C to 175°C. It is suitable for applications in industrial power supplies, automotive systems, and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1220 pF @ 25 V |
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