HUF75617D3ST
MOSFET N-CH 100V 16A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUF75617D3ST is an N-Channel UltraFET™ power MOSFET designed for demanding industrial applications. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 16 A (Tc) at 25°C. The Rds On is specified at a maximum of 90 mOhm at 16 A and 10 V gate drive. Key parameters include a typical Gate Charge (Qg) of 39 nC @ 20 V and Input Capacitance (Ciss) of 570 pF @ 25 V. With a maximum power dissipation of 64 W (Tc), this device is suitable for power conversion and motor control circuits. The HUF75617D3ST is packaged in a TO-252AA (DPAK) surface mount package and operates across a temperature range of -55°C to 175°C (TJ). It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 64W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V |
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