HUF75617D3
MOSFET N-CH 100V 16A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UltraFET™ HUF75617D3 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) rating of 16 A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 90 mOhm at 16 A and a 10 V Vgs. With a gate charge (Qg) of 39 nC (max) at 20 V and input capacitance (Ciss) of 570 pF (max) at 25 V, it is suitable for various power management tasks. The power dissipation capability is 64 W (Tc). The HUF75617D3 is packaged in an IPAK (TO-251-3 Short Leads, TO-251AA) with through-hole mounting and operates across a wide temperature range from -55°C to 175°C (TJ). This MOSFET is commonly utilized in industrial power supplies, automotive electronics, and telecommunications infrastructure.
Additional Information
Series: UltraFET™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 64W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V |
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