HUF75345S3
MOSFET N-CH 55V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's HUF75345S3 is a high-performance N-Channel MOSFET from the UltraFET™ series, designed for demanding power applications. This component features a 55V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc). The device boasts a low on-resistance of 7mOhm maximum at 75A and 10V Vgs, contributing to efficient power handling with a maximum power dissipation of 325W (Tc). Engineered for surface mounting, it is housed in a TO-263 (D2PAK) package. Key parameters include a gate charge of 275 nC (max) at 20V and input capacitance of 4000 pF (max) at 25V. The operating temperature range extends from -55°C to 175°C (TJ). This MOSFET is suitable for use in industrial and automotive sectors.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 325W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 275 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
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