HUF75343S3ST
MOSFET N-CH 55V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UltraFET™ HUF75343S3ST is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 75A at 25°C (Tc). Its low on-resistance (Rds On) of 9mOhm at 75A and 10V gate-source voltage (Vgs) minimizes conduction losses, while the 270W maximum power dissipation (Pd) at 25°C (Tc) ensures robust thermal performance. The device utilizes a TO-263 (D2PAK) surface-mount package, facilitating efficient board integration. Key parameters include a gate charge (Qg) of 205 nC at 20V and an input capacitance (Ciss) of 3000 pF at 25V. This MOSFET is suitable for use in power supply units, automotive systems, and industrial motor control.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 205 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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