HUF75343S3S
MOSFET N-CH 55V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUF75343S3S is an N-Channel UltraFET™ Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 75A at 25°C. With a low on-resistance (Rds On) of 9mOhm at 75A and 10V, it facilitates efficient power delivery. The device offers a maximum power dissipation of 270W at 25°C (Tc). Its TO-263-3, D2PAK package enables robust surface mounting. Key parameters include a gate charge (Qg) of 205 nC at 20V and input capacitance (Ciss) of 3000 pF at 25V. This MOSFET is suitable for use in power supply units and motor drive applications across various industries.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 205 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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